1, Silane (SiH4): toxic. Silane in the semiconductor industry, mainly for the production of high purity polysilicon production by vapor deposition of SiO2 films and silicon nitride thin film, polycrystalline silicon isolation layer, polysilicon ohmic contact layer and the heterogeneous or homogeneous epitaxial growth of silicon raw materials, and the ion source and the laser medium, but also can be used for the production of solar cells, optical fiber and optical sensors etc.. ,
2, Germanium (GeH4): highly toxic. Metal germanium is a good semiconductor material. Germanium is mainly used for chemical vapor deposition in the electronics industry, forming various silicon germanium alloys for the manufacture of electronic components. $
3, Phosphane (PH3): highly toxic. It is mainly used for the doping of silane epitaxy, and the source of phosphorus diffusion. It is also applied to polycrystalline silicon chemical vapor deposition, epitaxial GaP materials, ion implantation process, MOCVD process of compound semiconductor, and phosphorus silicon glass (PSG) passivation film preparation process. 2 L/ F) Q%|) `1 O5 K
4,Arsenane (AsH3): highly toxic. It is mainly used for the N type dopant in the epitaxial and ion implantation process. 9?,
5, Antimony hydride (SbH3): highly toxic. It is used as a gas phase dopant for the manufacture of N silicon semiconductors.
6, Borane (B2H6): a poisonous gas that asphyxiate and smell. Borane is a gaseous impurity source, ion implantation and boron doped oxidation diffusions, which have also been used as fuel for rockets and missiles as high-energy fuels.
7, Three boron fluoride (BF3): toxic, extremely strong irritation. It is mainly used as P type dopant, ion implantation source and plasma etching gas.
8, Three fluorinated nitrogen (NF3): strong toxicity. It is mainly used for the cleaning of chemical vapor deposition (CVD) device. Three, nitrogen fluoride can be used alone or combined with other gases as an etching gas for plasma technology. For example, NF3, NF3/Ar and NF3/He are used for etching MoSi2 of silicon compounds. NF3/CCl4 and NF3/HCl are used for etching MoSi2 as well as NbSi2 etching.
9, Three phosphorus fluoride (PF3): very toxic. As the source of gaseous phosphorus ion implantation. 3 `; |8 K, h* r:
10, Four silicon fluoride (SiF4): to meet the water to produce highly corrosive fluorosilic acid. It is mainly used for plasma etching of silicon nitride (Si3N4) and tantalum silicide (TaSi2), light emitting diode type P doping, ion implantation, epitaxial deposition and diffusion of silicon source and high purity quartz glass raw material for optical fiber.
11, Five phosphorus fluoride (PF5): toxic hydrogen fluoride smoke is produced in moist air. It is used as the source of gaseous phosphorus ion implantation. % D! Q. A$P L$V o
12, Four fluorocarbon (CF4): as a common working gas in the plasma etching process, it is a plasma etching agent for silicon dioxide and silicon nitride.
13, Six fluoroethane (C2H6): in the plasma process, the dry etching gas of silica and phosphorous silicon glass.
14, Perfluoropropane (C3F8): in the plasma etching process, the etching gas is used as silicon dioxide film, phosphorus silicon glass film.